Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Patent
1993-05-11
1999-11-09
Kelley, Nathan K.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
257201, 257 12, H01L 310328
Patent
active
059819863
ABSTRACT:
A semiconductor device comprises a first semiconductor layer formed of a Group III-V semiconductor layer or a II-VI semiconductor layer; and a second semiconductor layer formed of a Group IV semiconductor layer or a Group II-VI semiconductor layer which is different material from the first semiconductor layer and formed in heterojunction with the first semiconductor layer, a junction interface between the first semiconductor layer and the second semiconductor layer being {001} or {111} plane, and a two-dimensional carrier gas being generated in the heterojunction interface.
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patent: 4792832 (1988-12-01), Baba et al.
patent: 5300793 (1994-04-01), Kondow et al.
Brown et al., Defect Structure of Epi. CdTe Layers Grown on {100} and {111}.beta. GaAs and on {111}.beta. CdTe by MCVD, Apr. 1987, 1144-1145 Appl Phys 50(17).
Surface Science, "The Interface Transport Properties of Ge-GaAs Heterojunctions", L. Esaki et al., 1964, vol. 2, pp. 127-135.
Fujitsu Limited
Kelley Nathan K.
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