Semiconductor device having a heteroepitaxial substrate

Details Semiconductor device having a heteroepitaxial substrate Semiconductor device having a heteroepitaxial substrate

1990-10-23

1991-10-15

Prenty, Mark

357 4, H01L 29161, H01L 2712

Patent

active

050578804

ABSTRACT:
A semiconductor device comprises a substrate, a compound semiconductor layer provided on the substrate, and an active region formed on the compound semiconductor layer. The substrate in turn comprises a first semiconductor layer of a first semiconductor material, a second semiconductor layer of a second semiconductor material and provided on the first semiconductor layer, and a third semiconductor layer provided on the second semiconductor layer. The third semiconductor layer has a plurality of segments each defined by a pair of side walls that extend substantially perpendicular to the third semiconductor layer. The plurality of segments have a plurality of first-type segments and a plurality of second-type segments wherein the first- and second-type segments are arranged alternately when viewed in a direction parallel to the third semiconductor layer. The first- and second-type segments have respective lattice constants that differ with each other such that a stress field acting substantially perpendicular to the third semiconductor layer is induced in the third semiconductor layer.

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