Semiconductor device having a hetero-junction between SiC and a

Details Semiconductor device having a hetero-junction between SiC and a Semiconductor device having a hetero-junction between SiC and a

1997-08-18

1998-12-08

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257183, 257200, H01L 310312

Patent

active

058474145

ABSTRACT:
A semiconductor device comprises two adjacent semiconductor layers of different materials forming a heterojunction therebetween. A first layer has a larger gap between the conduction band and the valence band that a second layer at the interface between the layers. The second layer is made of SiC and the first layer is made of one of at least a) AlN and b) an alloy of AlN and other Group 3B-nitride.

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