Semiconductor device having a hetero junction

Details Semiconductor device having a hetero junction Semiconductor device having a hetero junction

1976-04-23

1977-12-06

Edlow, Martin H.

357 59, 357 63, 357 64, H01L 29161

Patent

active

040620344

ABSTRACT:
A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3570114 (1971-03-01), Bean
patent: 3611070 (1971-10-01), Engeles
patent: 3664896 (1972-05-01), Duncan
patent: 3726719 (1973-04-01), Broch
patent: 3961997 (1976-06-01), Chu
patent: 3977019 (1976-08-01), Matsushita
patent: 3990100 (1976-11-01), Mamine et al.
Brodsky et al., Phys. Stat. Sol. (b), 72, 761, 1975, pp. 761-770.
Busmundrud, Phys. Stat. Sol. (a) 28, 255 (1975).

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