Patent
1991-03-15
1992-09-01
Epps, Georgia Y.
357 15, 357 16, 357 61, 357 63, H01L 2980
Patent
active
051443791
ABSTRACT:
A semiconductor device comprises a substrate of a first material, a buffer layer of a second, group III-V semiconductor material provided on the substrate epitaxially, and a barrier layer of a third, group III-V compound semiconductor material different from the first and second materials and having a resistivity substantially larger than the resistivity of the buffer layer. The barrier layer further has a second lattice constant different from the lattice constant of the buffer layer and characterized by a band gap substantially larger than the band gap of the buffer layer. The barrier layer is provided on the buffer layer directly and an active layer of a fourth, group III-V compound semiconductor layer is provided on the barrier layer. On the active layer, an active device is provided such that the active device at least has a part formed in the active layer.
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patent: 4916498 (1990-04-01), Berenz
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Eshita Takashi
Inoue Toshikazu
Epps Georgia Y.
Fujitsu Limited
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