Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-30
2005-08-30
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000
Reexamination Certificate
active
06936844
ABSTRACT:
An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device.Lov region207is disposed in n-channel TFT302that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions217to220are disposed in n-channel TFT304that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring305and gate wiring306are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.
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Examiner: Mayer, European Search Report, Date of Search: Dec. 17, 2000, 4 Pages, Place of Search: Vienna.
Inventors: Shunpei Yamazaki et al., “Semiconductor Device and Fabrication Method Thereof”Filing Date: Jul. 5, 2000, Specifications and Drawings for U.S. Appl. No. 09/610,217.
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Koyama Jun
Yamazaki Shunpei
Costellia Jeffrey L.
Nadav Ori
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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