Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
2007-12-07
2009-06-09
Cao, Phat X (Department: 2813)
Semiconductor device manufacturing: process
Forming schottky junction
C438S571000, C438S591000, C257SE21186
Reexamination Certificate
active
07544593
ABSTRACT:
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
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Ihumiya Seiji
Miyano Kiyotaka
Ozawa Yoshio
Suizu Yasumasa
Tanaka Masayuki
Cao Phat X
Doan Nga
Frommer & Lawrence & Haug LLP
Kabushiki Kaisha Toshiba
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