Semiconductor device having a GaNO region intermediate a GaN-bas

Details Semiconductor device having a GaNO region intermediate a GaN-bas Semiconductor device having a GaNO region intermediate a GaN-bas

1998-07-21

2000-05-02

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257 79, 257 94, 257103, 257 9, 257 12, 257 13, 257613, 257615, 257744, 257745, H01L 3300

Patent

active

060575646

ABSTRACT:
A thin oxide region is introduced to a surface of a GaN layer prior to contact meal evaporation by carefully controlling the oxidation of the surface. This results in the normally present surface states to be smothered and thus a low band offset is observed in an ohmic contact comprising the contact metal and the GaN layer. The thickness of the oxide region preferably is about 8 .ANG. to 25 .ANG.. Other elements such as S, Se, Te, As, P and Hf can be used as an alternative to O. Devices using the thin region in the ohmic contact may include semiconductor laser devices, light emitting diodes, and III-V based transistors.

REFERENCES:
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patent: 5804834 (1998-09-01), Shimoyama et al.
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patent: 5932896 (1999-08-01), Sugiura et al.
H. Ishikawa et al., "Effects of Surface Treatments and Metal Work Functions on Electrical Properites at p-GaN/metal Interfaces", J. Appl. Phys., 81(3):1315-1322 (1997).
L.L. Smith et al., "Cleaning of GaN Surfaces", Journal of Electronic Materials, 25(5) :805-810 (1996).

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