Semiconductor device having a fuse and an improved moisture resi

Details Semiconductor device having a fuse and an improved moisture resi Semiconductor device having a fuse and an improved moisture resi

1996-05-20

1998-12-01

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257209, 257296, 365200, 437195, H01L 2702

Patent

active

058442952

ABSTRACT:
An interlayer insulating layer is formed to cover a fuse layer. A concave portion is provided on the surface of interlayer insulating layer located directly above fuse layer. A nitride layer as a passivation layer extends on the sidewalls of concave portion. In this way, a semiconductor device is obtained, the device having an improved moisture resistance, and in which a fuse can be easily blown by laser and a design rule of the region adjacent to the fuse can be improved.

REFERENCES:
patent: 4602420 (1986-07-01), Saito
patent: 4628590 (1986-12-01), Udo et al.
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5578861 (1996-11-01), Kinoshita et al.
S. Wolf et al., "Silicone Processing For the VLSI Era", Lattice Press, Sunset Beach, California, vol. 1, Processing Technology, 1986, pp. 192, 199.

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