Semiconductor device having a fuse and a low heat conductive...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S530000, C257S209000, C438S132000, C438S215000

Reexamination Certificate

active

06972474

ABSTRACT:
In a semiconductor device having a fuse11which makes connection between a first interconnection10and a second interconnection12, and a first low heat-conductive section13which makes connection between the first interconnection10and a third interconnection14at a site of the first interconnection10where the fuse11is not connected, the first low heat-conductive section13is fabricated from a material having a heat conductivity lower than that of the material to form the first interconnection10. When the fuse is blown with the laser beam irradiation, the heat dissipation through the heat conduction along the fuse and the interconnection is to be suppressed, and thereby a satisfactory disconnection at the fuse is to be achieved.

REFERENCES:
patent: 4032949 (1977-06-01), Bierig
patent: 4267633 (1981-05-01), Seiler
patent: 5469981 (1995-11-01), Srikrishnan et al.
patent: 5585663 (1996-12-01), Bezama et al.
patent: 6372554 (2002-04-01), Kawakita et al.
patent: 2002/0014680 (2002-02-01), Tottori
patent: 2002/0063305 (2002-05-01), Koike
patent: 61-110447 (1986-05-01), None
patent: 08-046050 (1996-02-01), None
patent: 2000-182393 (2000-06-01), None
patent: 01/88981 (2001-11-01), None

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