Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Reexamination Certificate
2005-08-16
2005-08-16
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
C257S623000, C257S190000, C438S978000
Reexamination Certificate
active
06930376
ABSTRACT:
An upper reflecting layer in a main region, a first support region and a second support region is separated from an upper reflecting layer in the surrounding region by separating grooves. The first support region and the second support region are folded in a valley shape from a substrate at grooves, and the first support region, the second support region and the main region are folded in a mountain shape, and the upper reflecting layer in the main region faces parallel to the substrate with spacing.
REFERENCES:
patent: 4830984 (1989-05-01), Purdes
patent: 5613022 (1997-03-01), Odhner et al.
patent: 5855998 (1999-01-01), Tanabe et al.
patent: 6051063 (2000-04-01), Tanabe et al.
patent: 6221739 (2001-04-01), Gorelik
patent: 6534838 (2003-03-01), Vaccaro
patent: 6646364 (2003-11-01), Horning et al.
patent: 2003/0173583 (2003-09-01), Kubota
patent: 08114408 (1996-05-01), None
Aida Tahito
Kubota Kazuyoshi
Vaccaro Pablo O.
ATR Advanced Telecommunications Research Institute International
Eckert George
Lee Eugene
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Semiconductor device having a folded layer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a folded layer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a folded layer structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3512192