Patent
1986-10-23
1988-01-05
James, Andrew J.
357 2312, 357 233, 357 231, 357 41, H01L 2978
Patent
active
047179449
ABSTRACT:
A semiconductor device including a field effect transistor, such as an insulated gate field effect transistor, which has in the direction from source zone to drain zone successive first and second channel zones with associated gate electrode parts. According to the invention, over at least 80% of the overall channel width, in a direction at right angles to the direction of source-drain current, the ratio L.sub.1 /L.sub.2 between the length L.sub.1 of the first gate electrode part and the length L.sub.2 of the second gate electrode part is variable and smaller than unity in order to improve the linearity of the field effect transistor.
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patent: 4219828 (1980-08-01), Lardy et al.
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Rodgers et al., "An Expand Theoretical Analysis of Double-Diffused Mos Transistors," IEEE J. of Solid State Circuits, vol. 5C-10, No. 5, 10/75, pp. 322-330.
Barsan, "Analysis and Modeling of Dual-Gate MOSFET's", IEEE Trans. on Elec. Dev., vol. Ed.-28, No. 5, May 1981, pp. 523-534.
Esser Leonard J. M.
Van de Wiel Petrus J. A. M.
Biren Steven R.
James Andrew J.
Mayer Robert T.
Mintel William A.
U.S. Philips Corporation
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