Semiconductor device having a ferroelectric capacitor

Details Semiconductor device having a ferroelectric capacitor Semiconductor device having a ferroelectric capacitor

2011-03-29

2011-03-29

Warren, Matthew E (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S239000, C438S126000, C438S128000

Reexamination Certificate

active

07915054

ABSTRACT:
An ultra-thin semiconductor chip of an FeRAM, which is miniaturized and highly integrated with characteristic degradation of a ferroelectric capacitor suppressed though a thin package structure is applied to the FeRAM is realized. The semiconductor chip is molded up by using a sealing resin with a filler content set at a value in a range of 90 weight % to 93 weight % to produce a package structure.

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