Semiconductor device having a doped amorphous silicon adhesive l

Details Semiconductor device having a doped amorphous silicon adhesive l Semiconductor device having a doped amorphous silicon adhesive l

1981-07-09

1984-10-09

Davie, James W.

357 2, 357 65, H01L 2348

Patent

active

044764839

ABSTRACT:
The invention relates to a semiconductor device having a disk-shaped semiconductor body in which on the side of a first major surface at least one circuit element is formed and in which a second major surface present opposite to the first major surface is covered with an adhesive layer on which at least one metal layer is provided, which metal layer is bonded to a carrier. According to the invention, the adhesive layer is formed of doped amorphous silicon of the same conductivity type as the semiconductor body on the side of the second major surface.

REFERENCES:
patent: 4251287 (1981-02-01), Dalal

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