Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1976-03-26
1978-10-17
Larkins, William D.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
357 54, 357 59, 357 71, 357 23, 204192S, H01L 2934, H01L 2904, H01L 2946
Patent
active
041212401
ABSTRACT:
A semiconductor device comprises a semiconductor chip including a conductive layer thereon, a film of Si disposed on the surface of the chip, and an insulating film of SiO.sub.2 disposed on said Si film, which is formed by a sputtering or a glow discharge method.
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Grosewald et al. "Reducing Radiation Damage in Insulated-Gate Field-Effect Transistors" IBM Tech. Disclosure Bulletin, vol. 14 (8/71), pp. 811-812.
Harding et al. "Universal Monolithic Circuit and Method of Fabrication" IBM Tech. Disclosure Bulletin, vol. 8 (10/65), pp. 804-805.
Hitachi , Ltd.
Larkins William D.
Munson Gene M.
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