Semiconductor device having a cylindrical capacitor and...

Details Semiconductor device having a cylindrical capacitor and... Semiconductor device having a cylindrical capacitor and...

2007-06-19

2007-06-19

Reagan, James A. (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S386000, C438S381000, C257S301000, C257S303000, C257SE27092

Reexamination Certificate

active

11289336

ABSTRACT:
A semiconductor device according to the present invention includes a cylindrical capacitor. An amorphous silicon layer serving as a lower electrode of the cylindrical capacitor has a two-layer structure including a lower high-concentration impurity sublayer and an upper low-concentration impurity sublayer. The blockage of a cylinder is prevented by etching the upper low-concentration impurity sublayer in a lower region of the cylinder and thereby reducing the crystal grain size of hemispherical silicon grains formed in the lower region.

REFERENCES:
patent: 6211010 (2001-04-01), Lee et al.
patent: 6930015 (2005-08-01), Ping et al.
patent: 2005/0070112 (2005-03-01), Pita et al.
patent: 2005/0202645 (2005-09-01), Kim et al.
patent: 2000-58790 (2000-02-01), None
patent: 2000-156476 (2000-06-01), None

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