Semiconductor device having a critical path wiring

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257763, 257764, 257765, 257751, 257775, H01L 2348, H01L 2940

Patent

active

058834338

ABSTRACT:
Disclosed is a semiconductor device, which has: a wiring corresponding to a critical path, a wiring delay time of which determines an operating speed of an entire circuity, and a wiring corresponding to other than the critical path. The critical path wiring the other wiring are formed on the same wiring layer, wherein a thickness of at least a part of the critical path wiring is greater than that of the other wiring.

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N. Oda et al., "New Wiring Deisgn Concept for Reducing Wiring Resistance Effect in ECL Circuits", IEEE 1990 Bipolar Circuits and Technology Meeting, pp. 140-143.
M. Bohr et al, "A High Performance 0.35 um Logic Technology for 3.3V and 2.5V Operation", IEDM 94, pp. 273-276.

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