Semiconductor device having a copper wiring layer formed on a ba

Details Semiconductor device having a copper wiring layer formed on a ba Semiconductor device having a copper wiring layer formed on a ba

1997-03-21

1999-10-26

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257761, 257762, H01L 2348

Patent

active

059734000

ABSTRACT:
A semiconductor device including, a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbide.

REFERENCES:
patent: 5661345 (1997-08-01), Wada et al.
patent: 5709958 (1998-01-01), Toyoda et al.
patent: 5744394 (1998-04-01), Iguchi et al.

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