Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1991-03-19
1993-04-27
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257284, 257285, 257286, 257287, H01L 29812
Patent
active
052065316
ABSTRACT:
A semiconductor device is provided of the type having a doped semiconductor region coupled to source and drain electrodes and an elongated control gate contacting the doped region along the length of the gate for forming a nonconducting depletion region across the doped region for preventing current flow therethrough with the gate having a minimized width to reduce contact area with the doped region, wherein the width of the gate is repeatedly reduced along the length thereof for further reducing contact area with the doped semiconductor region.
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Gomes David W.
Larkins William D.
Lockheed Sanders, Inc.
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