Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-10-23
2011-10-18
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S394000, C257S551000, C257SE29198, C257SE27020
Reexamination Certificate
active
08039879
ABSTRACT:
A semiconductor has an IGBT active section and a control circuit section for detecting an IGBT abnormal state. A collector region is formed on the back surface side (i.e., on the IGBT collector side) in a selective manner, namely right under the IGBT active section.
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Fuji Electric & Co., Ltd.
Kuo Wensing
Rossi Kimms & McDowell LLP
Sandvik Benjamin
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