Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1998-07-28
2000-04-18
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257773, 257774, 257750, 257758, 257510, 257296, 257249, H01L 2348, H01L 2352, H01L 2940
Patent
active
060518855
ABSTRACT:
A highly integrated semiconductor device is made using a high precision manufacturing process having a comparatively small number of process steps. The device is substantially free of misalignment between structures formed with respect to openings formed in the middle of layers. An interlayer insulating film with an opening is formed on a first conductor, and a second conductor is deposited on the resultant structure. Part of the second conductor enters the opening, thereby producing a depression in the second conductor, which has a sharp-angled bottom situated at the horizontal center of the opening. A film made of, for example, a nitride is deposited on the second conductor to fill the depression. Thereafter, this film is removed such that part of it remains in the depression. Using the remaining film as a mask, the second conductor is removed to the same level as the interlayer insulting film. Then, the remaining film is removed, and a dielectric and a third conductor are formed on the second conductor and the interlayer insulating film.
REFERENCES:
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5699291 (1997-12-01), Tsunemine
patent: 5811331 (1998-09-01), Ying et al.
Kabushiki Kaisha Toshiba
Saadat Mahshid
Warren Matthew
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