Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-12-29
2009-06-02
Richards, N Drew (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S221000, C438S424000, C438S435000, C257SE21002
Reexamination Certificate
active
07541259
ABSTRACT:
The semiconductor device includes a lower device isolation structure formed in a semiconductor substrate to define an active region. The lower device isolation structure has a first compressive stress. An upper device isolation structure is disposed over the lower device isolation structure. The upper device isolation structure has a second compressive stress greater than the first compressive stress. A gate structure is disposed over the active region between the neighboring upper device isolation structures.
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Hynix / Semiconductor Inc.
Novacek Christy L
Richards N Drew
Townsend and Townsend / and Crew LLP
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