Semiconductor device having a composite insulating interlayer

Details Semiconductor device having a composite insulating interlayer Semiconductor device having a composite insulating interlayer

1991-02-12

1991-10-08

James, Andrew J.

357 51, 357 52, H01L 2934

Patent

active

050559060

ABSTRACT:
A semiconductor device has a first interconnection pattern formed on a semiconductor substrate, and a second interconnection pattern located in and over a through hole formed at a composite insulating layer structure. The composite insulating layer structure is constituted by a first inorganic insulating film and an organic insulating film. At a peripheral region of the second interconnection pattern, the organic insulating film is partially eliminated to form an eliminated portion. The semiconductor device also has a second inorganic insulating film which is formed over the organic insulating film and is directly formed on the first inorganic insulating film, via the eliminated portion.

REFERENCES:
patent: 4523372 (1985-06-01), Balda et al.
patent: 4613888 (1986-09-01), Mase et al.
patent: 4618878 (1986-10-01), Aoyama et al.

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