Semiconductor device having a compact read-only memory

Details Semiconductor device having a compact read-only memory Semiconductor device having a compact read-only memory

1979-01-31

1981-03-03

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 15, 357 45, 357 59, 307238, 365105, 365175, H01L 2990, H01L 2956, H01L 2710, H01L 2904

Patent

active

042544270

ABSTRACT:
A read-only memory in which each memory cell is formed by two back-to-back diodes across which a connection can be formed by means of punch-through. Since cross-talk between adjacent cells is impossible, the packing density may be very large. Additionally, the cycle time of the memory is low due to the very short reverse recovery time of the invented structure.

REFERENCES:
patent: 4163985 (1979-08-01), Schuermeyer et al.

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