Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1997-04-10
1998-12-08
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 66, 257335, 257617, H01L 2904, H01L 31036
Patent
active
058474110
ABSTRACT:
A first polysilicon layer is formed on a substrate, and vacancies are introduced into an upper portion of the first polysilicon layer, thereby forming a second polysilicon layer. Then, a third polysilicon layer is formed on the second polysilicon layer. After depositing a silicon oxide film and a polysilicon film for a gate on the third polysilicon layer, these films are made into a pattern, thereby forming a control gate electrode and a gate oxide film. Impurity ions are then implanted, thereby forming source/drain regions. Thus, a channel region including the second polysilicon layer with the vacancies introduced is disposed below the control gate electrode, and hence, the mobility of a carrier in the channel region can be improved. As a result, a device can be operated at a high speed with a low voltage.
REFERENCES:
patent: 5481128 (1996-01-01), Hong
patent: 5548132 (1996-08-01), Batra et al.
patent: 5583366 (1996-12-01), Nakazawa
patent: 5665981 (1997-09-01), Banerjee et al.
Eckert II George C.
Martin-Wallace Valencia
Matsushita Electric - Industrial Co., Ltd.
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