Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-02-08
2005-02-08
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S014000, C257S020000, C257S023000, C257S192000, C257S194000, C257S195000
Reexamination Certificate
active
06853018
ABSTRACT:
A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof.The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.
REFERENCES:
patent: 5161235 (1992-11-01), Shur et al.
patent: 6410947 (2002-06-01), Wada
patent: 6534790 (2003-03-01), Kato et al.
Depke Robert J.
Holland & Knight LLP
Sony Corporation
Tran Minhloan
Tran Tan
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