Semiconductor device having a cavity and method of making

Details Semiconductor device having a cavity and method of making Semiconductor device having a cavity and method of making

1997-12-23

2000-07-11

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

257415, 257419, H01L 2714, H01L 2982

Patent

active

060877014

ABSTRACT:
A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).

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J.H. Smith et al., "Embedded Micromechanical Devices for the Monolithic Integration of MEMS with CMOS", Proc. 1995 IEDM, pp. 609-612.

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