Semiconductor device having a carrier and a multilayer metalliza

Details Semiconductor device having a carrier and a multilayer metalliza Semiconductor device having a carrier and a multilayer metalliza

1996-07-24

1998-03-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257765, H01L 2348

Patent

active

057316350

ABSTRACT:
A semiconductor device has a carrier, at least one semiconductor component provided on this carrier, and a multilayer metallization between the semiconductor component and the carrier. A first metal layer of aluminium, gold, or a gold alloy is provided on the surface of the semiconductor component, a second metal layer of titanium is provided on the first metal layer, a third metal layer of nickel is provided on the second metal layer, and a fourth metal layer of a binary or ternary gold-germanium alloy is provided on the third metal layer. The device has a low-ohmic contact resistance and extremely long useful life under temperature loads.

REFERENCES:
patent: 4480261 (1984-10-01), Hattori et al.
patent: 4772935 (1988-09-01), Lawler et al.
patent: 4954870 (1990-09-01), Takemura et al.
patent: 5053846 (1991-10-01), Morizuka

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