Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-05-31
2005-05-31
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S532000, C257S535000
Reexamination Certificate
active
06900514
ABSTRACT:
A semiconductor device having an isolation region formed in a semiconductor substrate and a capacitance device formed above that isolation region. The capacitance device has a first capacitor conductive layer disposed above the isolation region and a second capacitor conductive layer in the shape of a side wall formed along one side surface of the first capacitor conductive layer. The second capacitor conductive layer is disposed facing the first capacitor conductive layer, with a first capacitor insulating layer interposed.
REFERENCES:
patent: 5408115 (1995-04-01), Chang
patent: 5422504 (1995-06-01), Chang et al.
patent: 5494838 (1996-02-01), Chang et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 6177318 (2001-01-01), Ogura et al.
patent: 6211008 (2001-04-01), Yu et al.
patent: 6248633 (2001-06-01), Ogura et al.
patent: 6255166 (2001-07-01), Ogura et al.
patent: 6445028 (2002-09-01), Yoshida et al.
patent: 6600190 (2003-07-01), Lowrey et al.
patent: A 7-161851 (1995-06-01), None
patent: B1 2978477 (1999-09-01), None
patent: A 2001-156188 (2001-06-01), None
Hayashi et al., “Twin MONOS Cell with Dual Control Gates”, VLSI Technology Digest of Technical Papers, 2000.
Chang et al., “A New SONOS Memory Using Source-Side Injection for Programming”, IEEE Electron Device Letters, vol. 19, No. 7, Jul. 1998, pp. 253-255.
Chen et al., “A Novel Flash Memory Device withS Plit Gate SourceInjection and ONO Charge Storage Stack (SPIN)”, VLSI Technology Digest of Technical Papers, 1997, pp. 63-64.
New U.S. Patent Application, Jul.12, 2002, Kanai.
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