Semiconductor device having a built-in capacitor and manufacturi

Details Semiconductor device having a built-in capacitor and manufacturi Semiconductor device having a built-in capacitor and manufacturi

1992-03-05

1993-05-11

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257301, 257621, 257622, 257774, H01L 2702, H01L 2906, H01L 2912, H01L 3902

Patent

active

052105997

ABSTRACT:
A semiconductor device having a built-in capacitor comprises a substrate, an internal electrode provided on a top side of the substrate, a dielectric film provided so as to cover the internal electrode for establishing a predetermined capacitance, a surface electrode provided on the dielectric film so as to make a contact therewith, a plurality of through holes formed in the substrate in correspondence to the internal electrode so as to extend from a bottom side to the top side, and a back-side electrode provided on the bottom side of the substrate including the through holes so as to make a contact with the internal electrode through the through holes.

REFERENCES:
patent: 4737838 (1988-04-01), Watanabe
patent: 4959705 (1990-09-01), Lemnios et al.

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