Semiconductor device having a buffer structure for eliminating d

Details Semiconductor device having a buffer structure for eliminating d Semiconductor device having a buffer structure for eliminating d

1991-07-01

1992-07-28

James, Andrew J.

357 4, 357 89, 357 90, H01L 29161, H01L 2712

Patent

active

051344467

ABSTRACT:
A semiconductor service having a group III-V compound semiconductor layer formed on a buffer structure for intercepting propagation of defects, in which the buffer structure comprises a first material layer of a group III-V compound semiconductor material, a second material layer of a group III-V compound semiconductor material provided on the first material layer, the second material layer containing a first group III element and a second group III element different from the first group III element with a graded compositional profile in which the content of the second group III element is decreased towards an upper boundary and a lower boundary of the second material layer.

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