Semiconductor device having a body of amorphous silicon and meth

Details Semiconductor device having a body of amorphous silicon and meth Semiconductor device having a body of amorphous silicon and meth

1980-02-25

1982-03-02

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

204164, 118 501, 118723, 427 84, 427 85, 427 86, 427 88, C23C 1100

Patent

active

043178448

ABSTRACT:
An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices.

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Zairyo, "Electronic Materials," Sep. 1979, pp. 111-115 (Japanese).
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Stoke et al. (Ed.) Amorphous and Liquid Semiconductors, John Wiley & Sons Inc., New York (1974) pp. 1-11.
Chittick "Journ. of Non-Crystalline Solids III," 1970, pp. 255-270.
Spear et al. "Solid State Communications" V17, pp. 1193-1196 (1975).
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Nagasima "J. Vac. Sci. Technology" V14 #1, Jan./Feb. 1977, pp. 54-56.
Brodsky et al. "Physical Review B" V1 #6, Mar. 15, 1970, pp. 2632-2641.
Brodsky et al. (Ed.) Amorphous Semiconductors, pp. 1-3, Springer-Verlas, New York, 1979.
LeComber et al., "Physical Review Letters", V25 #8, (1970) pp. 509-511.

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