Semiconductor device having a bipolar transistor

Details Semiconductor device having a bipolar transistor Semiconductor device having a bipolar transistor

1997-05-15

1998-03-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase current gain or operating frequency

257370, 257371, 257378, H01L 27082, H01L 2976, H01L 2994, H01L 31062

Patent

active

057264864

ABSTRACT:
A semiconductor device allowing reduction in collector resistance can be obtained without complicating manufacturing processes. In the semiconductor device, a first impurity layer of a first conductivity type having an impurity concentration higher than that of first semiconductor region is provided such that substantially all the upper portion thereof is in contact with a lower surface of a first element isolation insulating film which is formed between a base layer and a collector extraction layer As a result, the first impurity layer serves as a current path, reducing collector resistance. In addition, the first impurity layer can be easily formed by ion implantation, so that manufacturing processes will not be complicated.

REFERENCES:
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4887145 (1989-12-01), Washio et al.
patent: 5321301 (1994-06-01), Sato et al.
"A 1.0 um N-Well CMOS/Bipolar Technology For VLSI Cirsuits", Miyamoto et al., 1983 IEEE, pp. 63-66.
"High Performance 1.0 um N-Well CMOS /Bipolar Technology", Momose et al., 1983 Symposium On VLSI Technology, pp. 40-41.

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