Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1994-08-19
1996-03-26
Ngo/, Nga/ n V.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257797, H01L 23544
Patent
active
055023320
ABSTRACT:
The conductive material film, e.g. a polysilicon film, is anisotropically etched for forming a pattern, e.g. a storage electrode, and a base insulating film, e.g. an insulating film made of SiO.sub.2, is isotropically etched for exposing the sidewall or backside of the conductive material film during a manufacturing process of the semiconductor element, e.g. a memory cell including a transistor and a capacitor. A belt cover film, including the conductive material film, is formed to cover the surrounding and vicinity of a chip in which the semiconductor element is formed, at the same time when the conductive material film is formed.
REFERENCES:
patent: 4364078 (1982-12-01), Smith et al.
patent: 4967259 (1990-10-01), Takagi
patent: 5136354 (1992-08-01), Morita et al.
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5164337 (1992-11-01), Ogawa et al.
Hasegawa Yoshiki
Ikemasu Shinichirou
Konno Yasuhiko
Fujitsu Limited
Ngo/ Nga/ n V.
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