Semiconductor device have a belt cover film

Details Semiconductor device have a belt cover film Semiconductor device have a belt cover film

1995-05-26

1996-12-03

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437228, H01L 218242

Patent

active

055808123

ABSTRACT:
The conductive material film, e.g. a polysilicon film, is anisotropically etched for forming a pattern, e.g. a storage electrode, and a base insulating film, e.g. an insulating film made of SiO.sub.2, is isotropically etched for exposing the sidewall or backside of the conductive material film during a manufacturing process of the semiconductor element, e.g. a memory cell including a transistor and a capacitor. A belt cover film, including the conductive material film, is formed to cover the surrounding and vicinity of a chip in which the semiconductor element is formed, at the same time when the conductive material film is formed.

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Novel Stacked Capacitor Cell For 64Mb DRAM, W. Wakamiya et al.
3mm.sup.2 Crown-shaped STC Cell for 64M-Bit DRAMS, Kaga et al.

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