Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1995-05-30
1998-10-13
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 66, 257 49, 257 72, 257 75, H01L 29786, H01L 2904, H01L 2906, H01L 31036
Patent
active
058215620
ABSTRACT:
Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.
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Funai Takashi
Kosai Takamasa
Makita Naoki
Mitani Yasuhiro
Miyamoto Tadayoshi
Sharp Kabushiki Kaisha
Tang Alice W.
Whitehead Carl W.
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