Semiconductor device formed having a metal layer for...

Details Semiconductor device formed having a metal layer for... Semiconductor device formed having a metal layer for...

2006-01-10

2006-01-10

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C256S013000, C438S106000

Reexamination Certificate

active

06984876

ABSTRACT:
A power semiconductor device including a semiconductor die having electrically active first and second surfaces. A mark is located on the second surface configured to facilitate identification of the device and a metal layer is formed over the second surface of the semiconductor die and over the mark. The metal layer is configured to conduct a current of the device and to allow the mark to be visible for identification purposes.

REFERENCES:
patent: 5268065 (1993-12-01), Grupen-Shemansky
patent: 6261919 (2001-07-01), Omizo
patent: 6448632 (2002-09-01), Takiar et al.
patent: 2003/0003688 (2003-01-01), Tandy et al.
patent: 2003/0157762 (2003-08-01), Peterson
patent: 2003/0162368 (2003-08-01), Connell et al.
patent: 2004/0072456 (2004-04-01), Dozier et al.

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