Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1992-04-23
1993-09-14
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257201, 257184, 257462, H01L 29161, H01L 29205, H01L 29225
Patent
active
052452042
ABSTRACT:
A semiconductor device comprises a collector region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity. The base region has first base area and second base area provided around the first base area. A band gap width of said second base area is greater than that of the first base area.
REFERENCES:
patent: 3242018 (1966-03-01), Grabmaier
patent: 4160258 (1979-07-01), Dawson et al.
patent: 4620210 (1986-10-01), Scavennec et al.
patent: 4785457 (1988-11-01), Asbeck et al.
patent: 4829343 (1989-05-01), Levi
patent: 4899200 (1990-02-01), Shur et al.
H. Kroemer, Japanese Journal of Applied Physics, Supplement, "Heterostructures for Everything: Device Principles of the 1980's?", vol. 20, No. 20-1, pp. 9-13, 1980.
S. M. Sze, Physics of Semiconductor Devices, Wiley, N.Y., pp. 783-787, 1980.
IBM Technical Disclosure Bulletin, "Heterojunction Bipolar Transistors with Low Base Conductivity," vol. 28, No. 5, p. 2005, Oct. 1985.
Winstel and Weyrich, Optoelektronik II, Springer, Berlin, pp. 232-234 1986.
Canon Kabushiki Kaisha
James Andrew J.
Meier Stephen D.
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