Semiconductor device for use in a solid state imaging device

Details Semiconductor device for use in a solid state imaging device Semiconductor device for use in a solid state imaging device

2006-11-21

2006-11-21

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S213000

Reexamination Certificate

active

07138670

ABSTRACT:
A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S<(2t1+2t2).

REFERENCES:
patent: 5227650 (1993-07-01), Noguchi et al.
patent: 6784469 (2004-08-01), Yamane et al.
Patent Abstracts of Japan, Publication No. 2001-308313, Publication Date: Nov. 2, 2001, copy of Japanese language patent also enclosed.

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