Semiconductor device for use in a sense amplifier

Details Semiconductor device for use in a sense amplifier Semiconductor device for use in a sense amplifier

1983-03-25

1985-09-03

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307362, 365190, 365208, H03K 524, G01R 19165, G11C 706

Patent

active

045394946

ABSTRACT:
A semiconductor device for use in a sense amplifier of a memory circuit includes a first load, a second load, third loads and first and second enhancement-type transistors. The first enhancement-type transistor is connected between the first load and the third loads and receives a data signal. The second enhancement-type transistor is connected between the second load and the third loads and receives a reference voltage. The reference voltage is compensated for by a temperature-compensating circuit so that the reference voltage is changed in accordance with a change in temperature.

REFERENCES:
patent: 4004164 (1977-01-01), Cranford, Jr. et al.
patent: 4223394 (1980-09-01), Pathak et al.
patent: 4287570 (1981-09-01), Stark
patent: 4375039 (1983-02-01), Yamauchi
patent: 4412143 (1983-10-01), Patella et al.
De Simone et al., "MOSFET Sense Amplifier with Low-Input Impedance", IBM Tech. Discl. Bull., vol. 14, No. 8, pp. 2290-2291, 1/1972.

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