Semiconductor device for providing a selectable reference voltag

Details Semiconductor device for providing a selectable reference voltag Semiconductor device for providing a selectable reference voltag

1980-02-04

1981-07-14

Edlow, Martin H.

357 23, 357 22, 357 41, H01L 2702, H01L 2978

Patent

active

042789885

ABSTRACT:
The disclosed semiconductor device is comprised of a substrate having a major surface; a channel having an elongated portion of a first predetermined length L.sub.1 and a uniform width W in the substrate near the surface; a single gate completely overlying the channel; and a conductive region in the substrate near the surface contacting the elongated portion of the channel at a predetermined length L.sub.2 from one end thereof. The conductive region picks off a reference voltage from the channel as a function of the ratio L.sub.1 /L.sub.2.

REFERENCES:
patent: 4068134 (1978-01-01), Tobey, Jr. et al.
patent: 4170818 (1979-10-01), Tobey, Jr. et al.
Millman et al., Pulse, Digital and Switching Waveforms, McGraw-Hill Co., 1965, pp. 3-4.
Carr et al., MOS/LSI Design and Applications, McGraw-Hill, 1972, pp. 107-108, 109-110, 125, 126.
MOS Aid Inc., Circuit Diagram of Mostek Part No. MK4116, Apr. 8, 1978.

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