Semiconductor device for preventing noise generation

Details Semiconductor device for preventing noise generation Semiconductor device for preventing noise generation

2007-04-03

2007-04-03

Vortman, Anatoly (Department: 2835)

Electrical transmission or interconnection systems

Switching systems

Plural switches

C307S116000, C307S112000, C323S223000

Reexamination Certificate

active

10311525

ABSTRACT:
There is provided a second switch used to turn on/off connection between a first circuit portion with a decoupling capacitance on a first switch side. Then, in accordance with on/off of the first switch, the second switch is turned on/off. By performing such switch control, when the first and second switches and are turned off and the first circuit portion shifts to the standby mode, the electric charge stored in the decoupling capacitance in the on state of the first and second switches is held. The electric charge held in the decoupling capacitance contributes to charging of a parasitic capacitance of the first circuit portion when the first and second switches and are again turned on. Therefore, when the first circuit portion shifts from the standby mode to the normal operating mode, the instantaneous voltage drop at a first connection point can be reduced.

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patent: 60-48525 (1985-03-01), None
patent: 6-29834 (1994-02-01), None

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