Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Patent
1995-12-05
1999-08-31
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
257106, 257603, H01L 29861, H01L 29866, H01L 31107
Patent
active
059456914
ABSTRACT:
In order to inhibit destruction during a turn-off state, a cathode electrode (6) is not connected to the overall major surface of a semiconductor substrate (10), but selectively connected to a region which is substantially opposed to an anode electrode (5). When a forward voltage is applied, therefore, an electric field which is generated in the semiconductor substrate (10) is distributed substantially only in a region immediately under a P-type diffusion layer (2), to hardly spread into a peripheral region positioned outside the region. Consequently, carriers which are injected from the P-type diffusion layer (2) and an N.sup.+ layer (4) into an N.sup.- layer (1) hardly spread to the peripheral region, but are stored substantially only in the region immediately under the P-type diffusion layer (2). Thus, concentration of a reverse current is relieved during a turn-off state in a peripheral edge portion of the P-type diffusion layer (2). Consequently, destruction during a turn-off state caused by concentration of the reverse current is prevented or inhibited.
REFERENCES:
patent: 3174882 (1965-03-01), Logan
patent: 3254234 (1966-05-01), Sziklai et al.
patent: 5210601 (1993-05-01), Kitagawa et al.
Soejima Noriyuki
Takeda Mitsuyoshi
Tomomatsu Yoshifumi
Loke Steven H.
Mitsubishi Denki & Kabushiki Kaisha
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