Semiconductor device for optical dosage measurement

Details Semiconductor device for optical dosage measurement Semiconductor device for optical dosage measurement

1980-07-25

1983-05-24

Edlow, Martin H.

357 1, 357 16, 357 58, 357 64, H01L 2724, H01L 29161, H01L 2714, H01L 29167

Patent

active

043853099

ABSTRACT:
A semiconductor for the measurement of optical radiation dosage comprising a semiconductor body having a doped surface layer on a doped substrate, the surface layer having a conductivity appreciably higher than the substrate thereby to form at the transition a potential barrier with a space charge region whereat carrier pairs are produced with the incidence of optical radiation, where various parameters of the surface layer and the substrate are so selected that the conductivity due to stored photoconductivity varies according to a chosen characteristic law with change in optical radiation dosage, and electrodes applied to the surface layer are connected in a measuring circuit to measure the stored photoconductivity.

REFERENCES:
patent: 4072541 (1978-02-01), Meulenberg, Jr. et al.
patent: 4109271 (1978-08-01), Pankove
patent: 4128733 (1978-12-01), Fraas et al.
patent: 4158851 (1979-06-01), Akai et al.
patent: 4167791 (1979-09-01), Bananar
M. K. Sheimkman and A. Ya. Shik, "Long-Term Relaxation and Residual Conduvity of Semi-Conductors (Review)", Soviet Physics Semi-Conductors, vol. 10, No. 2, Feb., (1976) pp. 128-143.

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