Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1995-11-13
1997-06-03
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257775, 257735, H01L 2348, H01L 2352
Patent
active
056357591
ABSTRACT:
A semiconductor device includes a base case 12, a first conductive pattern 6 selectively formed on the base case 12 a semiconductor element 1 mounted on the first pattern 6, a second conductive pattern 7 selectively formed on the base case 12 and connected to a first electrode 2 of the semiconductor element 1, the second conductive pattern 7 being separated from the first conductive pattern 6 to form a first parasitic capacitance therebetween, and a third conductive pattern 8 selectively formed on the base case 12 and connected to a second electrode 3 of the semiconductor element 1, the third conductive pattern 8 being separated from the first conductive pattern 6 to form a second parasitic capacitance therebetween, the first parasitic capacitance being larger than the second parasitic capacitance.
REFERENCES:
patent: 3364400 (1968-01-01), Granberry
patent: 4266239 (1981-05-01), Miyagaki et al.
patent: 4739389 (1988-04-01), Goedbloed
Clark S. V.
NEC Corporation
Saadat Mahshid D.
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