Semiconductor device for minimizing diffusion of conductivity en

Details Semiconductor device for minimizing diffusion of conductivity en Semiconductor device for minimizing diffusion of conductivity en

1993-09-30

1994-05-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257379, 257380, 257656, 365154, 365175, H01L 21265, H01L 2904, G11C 1100, G11C 1136

Patent

active

053130871

ABSTRACT:
A polysilicon layer is provided with a p-type impurity, and masked with an oxide mask to define a p-type region of the polysilicon layer. A second impurity is then provided into first unmasked regions of the polysilicon layer. A second oxide mask is deposited and anisotropically etched to form spacers adjacent to the first oxide mask. The spacers define two diffusion barrier regions of the polysilicon layer adjacent to the p-type region. An n-type impurity is then provided into second unmasked regions of the polysilicon layer to form two n-type regions adjacent the diffusion barrier regions. The diffusion barrier regions prevent cross diffusion of the p-type and the n-type impurities within the polysilicon layer, while also being of sufficient dimensions to permit normal p
operations.

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patent: 5182627 (1993-01-01), Chen et al.
patent: 5185285 (1993-02-01), Hasaka
patent: 5198382 (1993-03-01), Campbell et al.

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