Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Reexamination Certificate
2005-10-18
2005-10-18
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
C257S112000, C257S164000, C257S168000, C257S173000
Reexamination Certificate
active
06956248
ABSTRACT:
A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.
REFERENCES:
patent: 3359657 (1967-12-01), Hedberg
patent: 3975664 (1976-08-01), Baumbach
patent: 4021837 (1977-05-01), Hutson
patent: 4074337 (1978-02-01), Debortoli et al.
patent: 4086648 (1978-04-01), Hines et al.
patent: 4307430 (1981-12-01), Montalto et al.
patent: 4594635 (1986-06-01), Scheithauer et al.
patent: 4695916 (1987-09-01), Satoh et al.
patent: 4796150 (1989-01-01), Dickey et al.
patent: 4876621 (1989-10-01), Rust et al.
patent: 4876626 (1989-10-01), Kaczmarek
patent: 4901188 (1990-02-01), Gilberts
patent: 4905119 (1990-02-01), Webb
patent: 4907120 (1990-03-01), Kaczmarek et al.
patent: 4939619 (1990-07-01), Borkowicz et al.
patent: 4944003 (1990-07-01), Meyerhoefer et al.
patent: 4958253 (1990-09-01), Gilberts et al.
patent: 4958254 (1990-09-01), Kidd et al.
patent: 4964160 (1990-10-01), Traube et al.
patent: 4967256 (1990-10-01), Pathak et al.
patent: 5001537 (1991-03-01), Colman et al.
patent: 5031067 (1991-07-01), Kidd et al.
patent: 5101317 (1992-03-01), Cwirzen et al.
patent: 5150271 (1992-09-01), Unterweger et al.
patent: 5155649 (1992-10-01), Hung et al.
patent: 5172296 (1992-12-01), Kaczmarek
patent: 5175662 (1992-12-01), DeBalko et al.
patent: 5224012 (1993-06-01), Smith
patent: 5296646 (1994-03-01), Capper et al.
patent: 5341270 (1994-08-01), Kaczmarek
patent: 5357568 (1994-10-01), Pelegris
patent: 5359657 (1994-10-01), Pelegris
patent: 5365660 (1994-11-01), Capper et al.
patent: 5371647 (1994-12-01), Fried et al.
patent: 5398152 (1995-03-01), Borkowicz et al.
patent: 5422779 (1995-06-01), Borkowicz et al.
patent: 5429953 (1995-07-01), Byatt
patent: 5438619 (1995-08-01), Shannon et al.
patent: 5479031 (1995-12-01), Webb et al.
patent: 5490215 (1996-02-01), Pelegris
patent: 5500377 (1996-03-01), Flores et al.
patent: 5523916 (1996-06-01), Kaczmarek
patent: 5643014 (1997-07-01), Filus et al.
patent: 5696391 (1997-12-01), Bernier
patent: 5719413 (1998-02-01), Bernier
patent: 5753943 (1998-05-01), Okabe et al.
patent: 6084253 (2000-07-01), Turner, Jr.
patent: 6262443 (2001-07-01), Ballon et al.
patent: 6531717 (2003-03-01), Casey et al.
patent: 0 472 405 (1992-02-01), None
patent: 02087978 (1990-03-01), None
U.S. Appl. No. 09/504,224, filed Feb. 15, 2000, entitled, “Very Low Voltage Actuated Thyristor With Centrally-Located Offset Buried Region.”
ST SGS-Thomson Microelectronics, Data Sheet p.p.1/8-8/8, Oct. 1997.
ST SGS-Thomson Microelectronics, Data Sheet SMP Trisil, date unknown.
Handwritten note by Jack L. Turner, Jr., depicting SGS-Thomson Low Voltage (10v) device, Mar. 1997.
Casey Kelly C.
Turner, Jr. Elmer L.
Chauza Roger N.
Chauza & Handley LLP
Pham Long
Teccor Electronics, LP
LandOfFree
Semiconductor device for low voltage protection with low... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device for low voltage protection with low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device for low voltage protection with low... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3480655