Semiconductor device for isolating a photodiode to reduce...

Details Semiconductor device for isolating a photodiode to reduce... Semiconductor device for isolating a photodiode to reduce...

2006-09-19

2006-09-19

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000

Reexamination Certificate

active

07109535

ABSTRACT:
An improved semiconductor device that reduces reverse bias junction leakage in a photodiode by using a junction isolation region to isolate the photodiode from a trench isolation region. The improved semiconductor device improves image quality for different applications such as stand-alone digital cameras and digital cameras embedded in other imaging devices such as cellular phones and personal digital assistants.

REFERENCES:
patent: 1028470 (2000-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device for isolating a photodiode to reduce... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device for isolating a photodiode to reduce..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device for isolating a photodiode to reduce... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3540270