Semiconductor device for improving high-frequency characteristic

Details Semiconductor device for improving high-frequency characteristic Semiconductor device for improving high-frequency characteristic

1992-01-06

1994-02-15

Pascal, Robert J.

Amplifiers

With semiconductor amplifying device

Integrated circuits

257275, H03F 360

Patent

active

052870723

ABSTRACT:
A semiconductor device comprises a plurality of gate electrodes, drain electrodes, and source electrodes axi-symmetrically formed on opposite sides of a gate pad and drain pad. Two source pads are arranged at ends of these electrodes, to which the source electrodes are connected, so that a gate width can be shortened. Therefore, an output power, gain, etc., can be increased, and the high-frequency characteristics can be improved. Further, when arranging a plurality of semiconductor devices in parallel, the semiconductor chip can be formed in the shape of a square, i.e., the aspect ratio thereof can be reduced, and therefore, cracks in the semiconductor chip (semiconductor device) can be avoided.

REFERENCES:
patent: 3586930 (1971-06-01), Behari Das et al.
patent: 3969745 (1976-07-01), Blocker, III
patent: 4343015 (1982-08-01), Baliga et al.
patent: 4725747 (1988-02-01), Stein et al.
patent: 5025296 (1991-06-01), Fullerton et al.
Patent Abstracts of Japan, vol. 14, No. 1687 (E-912) Mar. 30, 1990 & JP-A-2 026033 (NEC Corp.) Jan. 29, 1990.

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