Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2011-03-15
2011-03-15
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S723000, C257S725000, C257SE23079
Reexamination Certificate
active
07906846
ABSTRACT:
A plurality of LSI chips (1) are stacked on an interposer (2). Signal coils (1b) for signal transmission are formed on the circuit formation surfaces of LSI chips (1) that are formed using silicon substrates (1a). The signal coils (1b) connect to circuits formed in the LAI chips (1). Through-holes (1d) are formed in the centers of the signal coils (1b) of the silicon substrate (1a). Signal coils (2c) connected to solder balls (5) by way of through-conductors (2d) are formed on the interposer (2). Magnetic pins (3) that are composed of a magnetic material are inserted in the centers of the signal coils (1band2c).
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4 Gbps High-Density AC Coupled Interconnection Stephen Mick, John Wilson, Paul Franzon. Department of Electrical and Computer Engineering North Carolina State University, Raleigh, NC.
7.6. A 1.2Gb/s/pin Wireless Superconnect Based on Inductive Inter-Chip Signaling (IIS) Daisuke Mizoguchi, et al. Keio University.
Hoshino Shigeki
Tanioka Michinobu
Taura Toru
NEC Corporation
Ngo Ngan
Sughrue & Mion, PLLC
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